期刊
APPLIED PHYSICS LETTERS
卷 102, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4773589
关键词
-
资金
- Zernike Institute for Advanced Materials
- Dutch Foundation for Fundamental Research on Matter (FOM)
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas (2DEG). Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work, we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773589]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据