期刊
APPLIED PHYSICS LETTERS
卷 103, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4840175
关键词
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资金
- EC [317839]
- German Science Foundation DFG under the project Ultragraphen
In this work, we perform an experimental investigation of the saturation velocity in MoS2 transistors. We use a simple analytical formula to reproduce experimental results and to extract the saturation velocity and the critical electric field. Scattering with optical phonons or with remote phonons may represent the main transport-limiting mechanism, leading to saturation velocity comparable to silicon, but much smaller than that obtained in suspended graphene and some III-V semiconductors. (C) 2013 AIP Publishing LLC.
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