期刊
APPLIED PHYSICS LETTERS
卷 102, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4795867
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资金
- Deutsche Forschungsgemeinschaft (DFG) [WO533/16-1, BA 1710/17-1, SCHR1123/4-1]
In this work a 250 nm CeO2(111) film grown on a hex-Pr2O3(0001)/Si(111) system is annealed at 660 degrees C for 30 min to form the i bulk phase of Ce7O12 as controlled by x-ray photoelectron spectroscopy. The (111) surface of the stabilized i phase is characterized via high-resolution low-energy electron diffraction. The i-phase surface exhibits a (root 7 x root 7)R19.1 degrees superstructure with two mirror domains. This structure is attributed to a periodic ordering of oxygen vacancies compared to the fluorite structure of CeO2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795867]
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