Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors

Thin films of Hf aluminate, (HfO2)(x)(Al2O3)(1-x) (Al = 8.4-38.5 at.-%) have been deposited by liquid injection MOCVD using the metal alkoxide precursors [Hf(mmp)(4)] (mmp = OCMe2CH2OMe) and [AI(O'Pr)(3)] (HfO2),(Al2O3)(1-x) thin films deposited at 500 degreesC had a thickness range of 7-13 nm and were high purity, with no carbon detected by Auger electron spectroscopy (AES) at the estimated detection limit of 0.5 at.-%. Thick films of (HfO2),(AI(2)O(3))(1-x), containing more than similar to7 at.-% Al were found by X-ray diffraction (XRD) to be amorphous. High frequency capacitance-voltage (C-V) measurements indicate strong electron trapping and a high density of interface states.