期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 40, 期 10, 页码 1389-1397出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2004.834767
关键词
nanotechnology; semiconductor device modeling; semiconductor lasers
We investigate optical gain for the modes guided by semiconductor nanowires. We focus on optically anisotropic wurtzite-type semiconductors (such as GaN) and the situation when the optical axis of the crystal coincides with the geometrical axis of the nanowire. For GaN nanowire lasers, the calculation of the modal gain requires the knowledge of two confinement factors for a given mode and two gain coefficients for the bulk crystal. We show that the confinement factors for nanowire lasers are very large in comparison to those for heterostructure lasers, and can even exceed unity. To estimate the bulk gain in GaN we use the free-carrier model and emphasize the importance of accounting for anisotropy of gain. Using the calculated confinement factors and bulk gain, we predict that free-standing nanowires with small radius (R less than or similar to 70 nm) lase into the HE11 mode, thicker nanowires (70 nm less than or similar to R less than or similar to 90 nm) lase into the TE01 mode.
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