4.6 Article

Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals

期刊

APPLIED PHYSICS LETTERS
卷 102, 期 19, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4807141

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资金

  1. Air Force Office of Scientific Research [FA9550-12-1-0195]
  2. National Science Foundation [CBET-0853350]
  3. Intel Corporation
  4. Directorate For Engineering
  5. Div Of Chem, Bioeng, Env, & Transp Sys [1336734] Funding Source: National Science Foundation

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While atomic vibrations dominate thermal conduction in the amorphous and face-centered cubic phases of Ge2Sb2Te5, electrons dominate in the hexagonal closed-packed (hcp) phase. Here we separate the electron and phonon contributions to the interface and volume thermal resistances for the three phases using time-domain thermoreflectance and electrical contact resistance measurements. Even when electrons dominate film-normal volume conduction (i.e., 70% for the hcp phase), their contribution to interface heat conduction is overwhelmed by phonons for high-quality interfaces with metallic TiN. (C) 2013 AIP Publishing LLC.

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