ZnO-SiO2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer

The ZnO-SiO2 nanocomposite solar-blind metal-semiconductor-metal photodetectors (PDs) on flexible polyethersulfone (PES) with an organosilicon (SiOx(CH3)) buffer layer improved the -10 V-biased responsivity of PDs illuminated wavelength of 240 nm from 0.75 A/W (without SiOx(CH3) buffer layer) to 3.86 A/W and the deep-ultraviolet (DUV)-visible rejection ratio of PDs from 8.10 x 10(4) (without SiOx(CH3) buffer layer) to 1.75 x 10(5). Moreover, the inserted SiOx(CH3) buffer layer would reduce the responsivity and DUV-visible rejection ratio of degradation of the severely bended ZnO-SiO2 nanocomposite PDs on PES. (C) 2013 AIP Publishing LLC.