期刊
APPLIED PHYSICS LETTERS
卷 103, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4833195
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资金
- National Science Foundation [MRSEC DMR-0820521, MRI DMR-0922937, DMR-0907475, EPS-1004094]
- Swedish Research Council (VR) [2010-3848]
- Swedish Governmental Agency for Innovation Systems (VINNOVA) [2011-03486]
- Linkoping Linnaeus Initiative for Novel Functionalized Materials (VR)
- VINNOVA
- EPSCoR [1004094] Funding Source: National Science Foundation
- Office Of The Director [1004094] Funding Source: National Science Foundation
- Vinnova [2011-03486] Funding Source: Vinnova
The effective electron mass parameter in Si-doped Al0.72Ga0.28N is determined to be m* = (0.336 +/- 0.020) m(0) from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is found supporting theoretical predictions. Assuming a linear change of the effective electron mass with the Al content in AlGaN alloys and m* = 0.232m(0) for GaN, an average effective electron mass of m* = 0.376m(0) can be extrapolated for AlN. The analysis of mid-infrared spectroscopic ellipsometry measurements further confirms the two phonon mode behavior of the E-1(TO) and one phonon mode behavior of the A(1)(LO) phonon mode in high-Al-content AlGaN alloys as seen in previous Raman scattering studies. (C) 2013 AIP Publishing LLC.
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