期刊
APPLIED PHYSICS LETTERS
卷 102, 期 21, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4808026
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资金
- U.K. Engineering and Physical Sciences Research Council [EP/F017375/1]
We report on the mechanism of operation of organic thin film resistive memory architectures based on an ambipolar compound consisting of oxadiazole, carbazole, and fluorene units. Cross-sections of the devices have been imaged by electron microscopy both before and after applying a voltage. The micrographs reveal the growth of filaments, with diameters of 50 nm-100 nm, on the metal cathode. We suggest that these are formed by the drift of aluminium ions from the anode and are responsible for the observed switching and negative differential resistance phenomena in the memory devices. (C) 2013 AIP Publishing LLC.
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