期刊
APPLIED PHYSICS LETTERS
卷 103, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4813540
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资金
- National Basic Research Program of China [2011CBA00103, 2012CB821404]
- NSF of China [11174247, 11190023]
- Fundamental Research Funds for the Central Universities of China
Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x = 0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (T-C) is around 200 K as x >= 0.05, which is among the highest T-C record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices. (C) 2013 Author(s).
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