Forward bias current-voltage (I-V) characteristics measured at room temperature were used to extract Schottky barrier heights in sulfur-implanted PtSi/n-Si and NiGe/n-Ge contacts. It is found that I-V data claimed to support barrier height reductions of similar to 700 meV and similar to 500 meV are more consistent with similar to 300 meV and 100 meV reductions, respectively. These estimates should better guide attempts aiming at finding physical models for the observed reductions. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789989]
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