期刊
APPLIED PHYSICS LETTERS
卷 103, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4824980
关键词
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资金
- Marie Curie ITN NetFISiC (EC FP7) [264613]
- LAST POWER project (ENIAC) [120218]
In this Letter, we report a quantitative analysis of the n-type doping occurring at SiO2/4H-SiC interfaces during post-deposition-annealing (PDA) in N2O or POCl3 of a 45 nm thick oxide. In particular, a nanoscale characterization using scanning capacitance microscopy on the cross section of metal-oxide-semiconductor capacitors allowed to determine the electrically active nitrogen and phosphorous concentration under the SiO2 layer after PDA in N2O and POCl3, i.e., 5 x 10(17) cm(-3) and 4.5 x 10(18) cm(-3), respectively. The technological implications have been discussed considering the possible impact of a PDA-induced counter doping of the p-type body region of a n-channel metal-oxide-semiconductor-field-effect-transistor on the device threshold voltage. (C) 2013 AIP Publishing LLC.
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