Organic transistor and inverter based on assembly of organic nanowires achieved by optimizing surface morphology

We have demonstrated that assemblies of organic nanowires can be grown on Si and SiO2 substrates by controlling growth parameters. At higher growth temperatures, anisotropic growth dominates over isotropic growth, resulting in surface morphologies consisting of nanowire-like elongated grains. These elongated grains provide better pi-pi stacking, leading to higher carrier mobility and better performance of organic transistors. Using this approach, we have demonstrated organic inverter using complementary semiconducting materials, p-type copper phthalocyanine and n-type copper hexadecafluoro phthalocyanine. These results indicate that small organic molecule-based nanowires are promising candidates for future organic based microelectronics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795150]