期刊
APPLIED PHYSICS LETTERS
卷 102, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4795149
关键词
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资金
- MOST [2012CB933401, 2013CB934600, 2009CB623703]
- NSFC [11274014, 11234001]
- Program for New Century Excellent Talents in University of China [NCET-12-0002]
We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795149]
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