Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering

Amorphous Sr-doped LaMnO3 (a-LSMO) thin films were deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering. The Ag/a-LSMO/Pt device exhibited reversible bipolar resistive switching over 100 cycles with a resistance ratio (high resistance state to low resistance state) of over 4 orders of magnitude and stable retention for over 10(4) s at room temperature. Analysis indicates that the resistive switching originates from the formation/rupture of Ag nanofilaments in the a-LSMO thin films acting as solid electrolytes. The device showed potential for multibit storage as well as low power consumption applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800229]