期刊
APPLIED PHYSICS LETTERS
卷 102, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4809672
关键词
-
资金
- ANR project WITH
- CNRS
- GDR-I project Semiconductor sources and detectors of THz frequencies
- US-French initiative PUF
- Scientifique Interest Groupement GIS-TERALAB
- Army Research Laboratory under ARL MSME Alliance
- RFBR
- RAS
- Marie Curie International Research Staff Exchange Scheme [612624]
We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FETs) operating in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. The conversion efficiency of the device, Q (defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power) has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据