期刊
APPLIED PHYSICS LETTERS
卷 102, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4795628
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资金
- Russian Foundation for Basic Research
- Program of Fundamental Research of Russian Academy of Sciences
- Ministry of Education and Science of the Russian Federation
- Dynasty Foundation
We introduce an analytical approach to describe the multi-state lasing phenomenon in quantum dot lasers. We show that the key parameter is the hole-to-electron capture rate ratio. If it is lower than a certain critical value, the complete quenching of ground-state lasing takes place at high injection levels. At higher values of the ratio, the model predicts saturation of the ground-state power. This explains the diversity of experimental results and their contradiction to the conventional rate equation model. Recently found enhancement of ground-state lasing in p-doped samples and temperature dependence of the ground-state power are also discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795628]
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