Strong second-harmonic generation in silicon nitride films

We observe strong second-harmonic generation from silicon nitride films prepared on fused silica substrates by plasma enhanced chemical vapor deposition. The components of the second-order nonlinear optical susceptibility tensor of the films are calibrated against quartz crystal. The dominant component has the magnitude of 2.5 pm/V, almost two orders of magnitude larger than reported for Si3N4, and about three times larger than for the traditional nonlinear crystal of potassium dihydrogen phosphate. The results indicate that silicon nitride has great potential for second-order nonlinear optical devices, especially in on-chip nanophotonics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704159]