High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C-10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm(2)/Vs in the crystalline C-10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769436]