期刊
APPLIED PHYSICS LETTERS
卷 101, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4769436
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资金
- New Energy and Industrial Technology Developing Organization (NEDO)
- Japan Science and Technology Agency (JST)
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan
- Grants-in-Aid for Scientific Research [23245041, 23686005, 22245001, 22245032] Funding Source: KAKEN
High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C-10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm(2)/Vs in the crystalline C-10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769436]
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