Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

We explore the optimum growth space for a 47.0 angstrom InAs/21.5 angstrom Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 +/- 5 meV. However, SL quality is sensitive to the growth temperature (T-g). For the SLs grown at 390-470 degrees C, a photoresponse signal gradually increases as Tg increases from 400 to 440 degrees C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of similar to 10 000 V/cm(2) and 300 K recombination lifetime of similar to 70 ns for an optimized SL. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764015]