InP-based 2.8-3.5 μm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

We present InP-based resonant-cavity light emitting diodes (LEDs), which are emitting at 2.8 mu m, 3.3 mu m, and 3.5 mu m and were grown by metalorganic vapor phase epitaxy. This long wavelength electroluminescence is achieved by using highly strained GaInAs/GaAsSb type-II quantum wells. The performance of two different active region designs, superlattice (SL) and W-shaped quantum wells (W), is compared. Although continuous wave operation up to 80 degrees C could be proven, a spontaneous emission droop similar to nitride-based LEDs has been observed and is discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768447]