期刊
APPLIED PHYSICS LETTERS
卷 101, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4754688
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资金
- German Federal Ministry of Education and Research
High-efficiency InGaN-based light-emitting diodes have been grown on (111) silicon substrates and investigated with regard to efficiency and carrier lifetime as a function of current density. Using a single quantum well active layer ensures a well-defined active volume which enables the precise determination of the recombination coefficients in the ABC rate model for different emission wavelengths and junction temperatures. Good agreement of the resulting C values with calculated Auger coefficients is found both with respect to absolute value as well as their dependence on bandgap energy and temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754688]
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