Solution-processed ambipolar vertical organic field effect transistor

We report on a solution-processed ambipolar patterned-electrode vertical organic field effect transistor (PE-VOFET) based on the P(NDI2OD-T2) polymer. The Schottky barrier-based VOFET operation uniquely facilitates an ambipolar transport using a single anode-cathode-electrode and a single semiconductor material. Pin-hole free sub-100 nanometer channel length devices are obtained with no high resolution patterning owing to both the polymer's smooth morphology and the underlining patterned-electrode's flatness. The VOFET exhibits n-type on/off ratio >10(3), current density >50 [mAcm(-2)] under V-DS = 5V, as well as p-type operation. Prone to design and optimization, the ambipolar PE-VOFET is a promising platform for organic complementary circuit technology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731774]