期刊
APPLIED PHYSICS LETTERS
卷 101, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4753816
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The electric field-induced similar to 180 degrees magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4753816]
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