期刊
APPLIED PHYSICS LETTERS
卷 100, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3691181
关键词
aluminium compounds; insulating thin films; leakage currents; organic semiconductors; thin film transistors; vapour deposition
资金
- European Commission [231500]
- Regione Autonoma della Sardegna (RAS) under the POR Sardegna FSE [1399/207]
Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 x 10(-9) A/cm(2), and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691181]
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