相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。High-Power Blue-Violet Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
Yuji Zhao et al.
APPLIED PHYSICS EXPRESS (2011)
Misfit dislocation formation via pre-existing threading dislocation glide in (11(2)over-bar2) semipolar heteroepitaxy
Po Shan Hsu et al.
APPLIED PHYSICS LETTERS (2011)
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
Emmanouil Kioupakis et al.
APPLIED PHYSICS LETTERS (2011)
Recombination coefficients of GaN-based laser diodes
W. G. Scheibenzuber et al.
JOURNAL OF APPLIED PHYSICS (2011)
Droop in III-nitrides: Comparison of bulk and injection contributions
Aurelien David et al.
APPLIED PHYSICS LETTERS (2010)
A numerical study of Auger recombination in bulk InGaN
Francesco Bertazzi et al.
APPLIED PHYSICS LETTERS (2010)
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
Shih-Chun Ling et al.
APPLIED PHYSICS LETTERS (2010)
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
Aurelien David et al.
APPLIED PHYSICS LETTERS (2010)
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
Aurelien David et al.
APPLIED PHYSICS LETTERS (2010)
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
J. Hader et al.
APPLIED PHYSICS LETTERS (2010)
High-Power and High-Efficiency InGaN-Based Light Emitters
Ansgar Laubsch et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Efficiency droop in nitride-based light-emitting diodes
Joachim Piprek
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
Umit Ozgur et al.
PROCEEDINGS OF THE IEEE (2010)
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X. Li et al.
APPLIED PHYSICS LETTERS (2009)
Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes
Martin F. Schubert et al.
APPLIED PHYSICS LETTERS (2009)
Auger recombination rates in nitrides from first principles
Kris T. Delaney et al.
APPLIED PHYSICS LETTERS (2009)
Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes
M. Zhang et al.
APPLIED PHYSICS LETTERS (2009)
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
Matteo Meneghini et al.
JOURNAL OF APPLIED PHYSICS (2009)
Nonpolar and Semipolar Group III Nitride-Based Materials
J. S. Speck et al.
MRS BULLETIN (2009)
On the importance of radiative and Auger losses in GaN-based quantum wells
J. Hader et al.
APPLIED PHYSICS LETTERS (2008)
Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes
Aurelien David et al.
APPLIED PHYSICS LETTERS (2008)
Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
Martin F. Schubert et al.
APPLIED PHYSICS LETTERS (2008)
Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2
N. F. Gardner et al.
APPLIED PHYSICS LETTERS (2007)
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim et al.
APPLIED PHYSICS LETTERS (2007)
Defect related issues in the current roll-off in InGaN based light emitting diodes
B. Monemar et al.
APPLIED PHYSICS LETTERS (2007)
Auger recombination in InGaN measured by photoluminescence
Y. C. Shen et al.
APPLIED PHYSICS LETTERS (2007)
分享论文
