Self-organized InAs/InGaAsP quantum dot tube lasers

We report the achievement of a semiconductor tube laser that can operate in the optical communication wavelength range for applications in the emerging Si-photonics. Such nanoscale devices are fabricated from self-organized InAs/InGaAsP quantum dot nanomembranes through a strain-driven self-rolling mechanism using standard photolithography process. Under continuous wave optical pumping, the devices exhibit an ultralow lasing threshold of similar to 1.26 mu W at 82K, with multiple emission wavelengths in the S band of optical communications. The spontaneous emission coupling factor and Purcell factor are estimated to be similar to 0.30 and similar to 4.8, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737425]