Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm(2) V(-1)s(-1), with on/off current ratios of 10(3) and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (similar to 1.5 mu m) that provide a path to printed transistors with small critical dimensions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691177]