相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
Kai Cheng et al.
APPLIED PHYSICS EXPRESS (2012)
Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate
S. Lawrence Selvaraj et al.
APPLIED PHYSICS LETTERS (2011)
AlxGa1-xN/GaN heterostructures on a thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors
Vivian Kaixin Lin et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Improving GaN-on-silicon properties for GaN device epitaxy
A. Dadgar et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 (2011)
Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD
Adam R. Boyd et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 (2009)
Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique
S. Tripathy et al.
JOURNAL OF APPLIED PHYSICS (2007)
Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates
S Arulkumaran et al.
SOLID-STATE ELECTRONICS (2005)
Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys -: art. no. 125203
VY Davydov et al.
PHYSICAL REVIEW B (2002)
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
E Feltin et al.
APPLIED PHYSICS LETTERS (2001)
Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
H Marchand et al.
JOURNAL OF APPLIED PHYSICS (2001)
Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness
A Dadgar et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
Resonant Raman scattering from buried AlxGa1-xN (x≤0.17) layers in (Al, Ga, In)N heterostructures
M Yoshikawa et al.
JOURNAL OF APPLIED PHYSICS (2000)