4.6 Article

Schottky diode with excellent performance for large integration density of crossbar resistive memory

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Chemistry, Multidisciplinary

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

Seo Hyoung Chang et al.

ADVANCED MATERIALS (2011)

Article Electrochemistry

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

Gun Hwan Kim et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2010)

Article Nanoscience & Nanotechnology

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Deok-Hwang Kwon et al.

NATURE NANOTECHNOLOGY (2010)

Article Electrochemistry

Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications

Gyu-Jin Choi et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)

Article Chemistry, Multidisciplinary

High-current-density CuOx/ZnOx thin-film diodes for cross-point memory applications

Bo Soo Kang et al.

ADVANCED MATERIALS (2008)

Article Physics, Applied

(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array

Yong Cheol Shin et al.

APPLIED PHYSICS LETTERS (2008)

Article Nanoscience & Nanotechnology

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2008)

Article Engineering, Electrical & Electronic

Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method

A Ferhat-Hamida et al.

SOLID-STATE ELECTRONICS (2002)