期刊
APPLIED PHYSICS LETTERS
卷 101, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4765356
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资金
- PrivaTran LLC through Navy SPAWAR Systems Center Pacific Phase II SBIR [N66001-11-C-5212]
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1127537] Funding Source: National Science Foundation
The electroforming voltage (V-et) of silicon oxide resistive random access memories (RRAM) treated with post-deposition-anneal (PDA) and/or post-metal-anneal (PMA) in different gas ambients is compared. Secondary ion mass spectroscopy (SIMS) result shows significant incorporation of H/D atoms in SiOx after anneals in H-2/N-2 and D-2/N-2. V-ef is significantly reduced after anneal in H-2/N-2 or D-2/N-2, but D-2/N-2 anneal results in even lower V-ef, which could be due to more stable Si passivation in the Si-D/O+ pair as compared to the Si-H/O+ pair. On and off state currents are measured at 200 mV gate bias every 60s for a total time of 6000 s with results showing good data retention for both on and off states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4765356]
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