Antiferroelectric Pb(Zr, Nb, Ti)O-3 (PZNT) films were deposited via a sol-gel process on Pt(111)/Ti/SiO2/Si, LaNiO3- and La0.5Sr0.5CoO3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZNT on LaNiO3-buffered Si takes the form of W proportional to f(0.08), which differs significantly from that form of W proportional to f(-0.14) of PZNT on La0.5Sr0.5CoO3-buffered Si. This indicates that the scaling relations of W vary substantially as bottom electrodes change and might be closely related to the variation of nonuniform strain field and depolarization field within the AFE films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752726]
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