期刊
APPLIED PHYSICS LETTERS
卷 100, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3695058
关键词
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资金
- National Science Foundation [CBET-1134311]
- United States Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- LDRD program office at Sandia National Laboratories
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1134311] Funding Source: National Science Foundation
We measure the thermal interface conductance between thin aluminum films and silicon substrates via time-domain thermoreflectance from 100 to 300 K. The substrates are chemically etched prior to aluminum deposition, thereby offering a means of controlling interface roughness. We find that conductance can be systematically varied by manipulating roughness. In addition, transmission electron microscopy confirms the presence of a conformal oxide for all roughnesses, which is then taken into account via a thermal resistor network. This etching process provides a robust technique for tuning the efficiency of thermal transport while alleviating the need for laborious materials growth and/or processing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695058]
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