4.6 Article

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Field dependent magnetic anisotropy of Ga0.2Fe0.8 thin films

Damon A. Resnick et al.

JOURNAL OF APPLIED PHYSICS (2011)

Article Multidisciplinary Sciences

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

Jia-Mian Hu et al.

NATURE COMMUNICATIONS (2011)

Article Chemistry, Multidisciplinary

In Situ Observation of Reversible Nanomagnetic Switching Induced by Electric Fields

Todd Brintlinger et al.

NANO LETTERS (2010)

Article Physics, Applied

Electric-field-induced reversible magnetic single-domain evolution in a magnetoelectric thin film

Tien-Kan Chung et al.

APPLIED PHYSICS LETTERS (2009)

Article Nanoscience & Nanotechnology

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

T. Maruyama et al.

NATURE NANOTECHNOLOGY (2009)

Article Physics, Multidisciplinary

Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature

M. Weiler et al.

NEW JOURNAL OF PHYSICS (2009)

Article Physics, Applied

GaMnAs-based hybrid multiferroic memory device

M. Overby et al.

APPLIED PHYSICS LETTERS (2008)

Review Physics, Applied

Multiferroic magnetoelectric composites: Historical perspective, status, and future directions

Ce-Wen Nan et al.

JOURNAL OF APPLIED PHYSICS (2008)

Article Chemistry, Physical

Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As

I. Stolichnov et al.

NATURE MATERIALS (2008)

Article Materials Science, Multidisciplinary

Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures

A. W. Rushforth et al.

PHYSICAL REVIEW B (2008)

Review Multidisciplinary Sciences

Magnetic domain-wall racetrack memory

Stuart S. P. Parkin et al.

SCIENCE (2008)

Article Computer Science, Hardware & Architecture

Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip

WJ Gallagher et al.

IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2006)

Article Physics, Multidisciplinary

Spin reorientation transition in single-domain (Ga,Mn)As

KY Wang et al.

PHYSICAL REVIEW LETTERS (2005)

Review Multidisciplinary Sciences

Magnetic domain-wall logic

DA Allwood et al.

SCIENCE (2005)

Article Physics, Applied

Extraordinary magnetoelasticity and lattice softening in bcc Fe-Ga alloys

AE Clark et al.

JOURNAL OF APPLIED PHYSICS (2003)

Article Physics, Multidisciplinary

Giant planar Hall effect in epitaxial (Ga,Mn)As devices

HX Tang et al.

PHYSICAL REVIEW LETTERS (2003)

Article Physics, Applied

Magnetism of ultrathin FeCo (001) films on GaAs(001)

M Dumm et al.

JOURNAL OF APPLIED PHYSICS (2000)