4.6 Article

Ultrahigh conductivity of large area suspended few layer graphene films

期刊

APPLIED PHYSICS LETTERS
卷 101, 期 26, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4772797

关键词

-

资金

  1. Army Research Office through ARO-MURI
  2. ARO-Core [MURI W911NF-11-1-0024, ARO W911NF-09-1-0319, DURIP W911NF-11-1-0315]
  3. Direct For Mathematical & Physical Scien [0960179] Funding Source: National Science Foundation
  4. Division Of Chemistry [0960179] Funding Source: National Science Foundation

向作者/读者索取更多资源

Room-temperature (atmospheric-pressure) electrical conductivity measurements of wafer-scale, large-area suspended (few layer) graphene membranes with areas up to 1000 mu m(2) (30 mu m x 30 mu m) are presented. Multiple devices on one wafer can be fabricated with high yield from the same chemical vapor deposition grown graphene sheet, transferred from a nickel growth substrate to large opening in a suspended silicon nitride support membrane. This represents areas two to orders of magnitude larger than prior transport studies on any suspended graphene device (single or few layer). We find a sheet conductivity of similar to 2500 e(2)/h (or about 10 Omega/sq) of the suspended graphene, which is an order of magnitude higher than any previously reported sheet conductance of few layer graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772797]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据