期刊
APPLIED PHYSICS LETTERS
卷 101, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4732522
关键词
energy gap; field effect transistors; multilayers; Schottky barriers; semiconductor materials; tungsten compounds
资金
- Semiconductor Research Corporation (SRC), Nanoelectronics Research Initiative (NRI)
- National Institute of Standards and Technology (NIST) through the Midwest Institute for Nanoelectronics Discovery (MIND)
- Office of Naval Research (ONR)
- National Science Foundation (NSF)
- Slovenian Research Agency of the Republic of Slovenia [J1-2352]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1232191] Funding Source: National Science Foundation
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2. The Schottky-barrier FETs demonstrate ambipolar behavior and a high (similar to 10(5)x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the ultrathin layered semiconductor crystal material. The FETs also show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the chemical synthesis, and flexibility of layered semiconductor crystals such as WS2 make them attractive for future electronic and optical devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732522]
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