期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 43, 期 10A, 页码 L1258-L1260出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L1258
关键词
deep-UV; AlGaN-MQW laser; multi buffer layer; SiC substrate; metal organic vapor phase epitaxy
The crystal quality of AlN and AlGaN MQW layers was improved greatly by a combination of flow-rate modulation epitaxy (FME) and the optimized AlN/GaN multi-buffer layer in low-pressure metal organic vapor phase epitaxy (LP-MOVPE). The cross-sectional TEM image indicated that the threading-dislocation density of the AlN template decreased from 10(9)-10(10) cm(-1) to 10(7)-10(8) cm(-2) by this combination. Resultantly, the lasing wavelength with the same optical pumping power decreased by about 80 nm, and lasing at 241 nm, the shortest reported so far at room temperature, has been achieved.
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