期刊
APPLIED PHYSICS LETTERS
卷 100, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3676277
关键词
-
资金
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Project Agency (DARPA) through FCRP Center on Functional Engineered Nano Architectonics (FENA)
- US National Science Foundation (NSF)
- US Office of Naval Research (ONR) [N00014-10-1-0224]
- US NSF at RPI
- NSF EAGER
- Russian Fund for Basic Research (RFBR) [11-02-00013]
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1134723] Funding Source: National Science Foundation
The authors demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene. (C) 2012 American Institute of Physics. [doi:10.1063/1.3676277]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据