4.6 Article

Nanotwins and stacking faults in high-strength epitaxial Ag/Al multilayer films

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APPLIED PHYSICS LETTERS
卷 101, 期 22, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4768000

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  1. NSF-DMR metallic materials and nanostructures program [0644835]
  2. Division Of Materials Research
  3. Direct For Mathematical & Physical Scien [0644835] Funding Source: National Science Foundation

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Epitaxial Ag/Al multilayer films have high hardness (up to 5.5 GPa) in comparison to monolithic Ag and Al films (2 and 1 GPa). High-density nanotwins and stacking faults appear in both Ag and Al layers, and stacking fault density in Al increases sharply with decreasing individual layer thickness, h. Hardness increases monotonically with decreasing h, with no softening. In comparison, epitaxial Cu/Ni multilayers reach similar peak hardness when h approximate to 5 nm, but soften at smaller h. High strength in Ag/Al films is primarily a result of layer interfaces, nanotwins, and stacking faults, which are strong barriers to dislocation transmission. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768000]

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