期刊
APPLIED PHYSICS LETTERS
卷 100, 期 24, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4729470
关键词
-
资金
- National Science Foundation [ECS-0824116]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0824116] Funding Source: National Science Foundation
Far-infrared photoconductive detectors based on intersubband transitions in III-nitride semiconductor quantum wells are demonstrated. The device active material is based on a double-step quantum-well design, where two different (Al)GaN compositions are used both in the wells and in the barriers. With this approach, one can create a virtually flat multiple-quantum-well potential energy profile, where the deleterious effects of the intrinsic spontaneous and piezoelectric fields of nitride heterostructures are almost completely eliminated. Photocurrent spectra centered at a wavelength of 23 mu m (13 THz frequency) are resolved up to 50 K, with responsivity of approximately 7 mA/W. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729470]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据