期刊
APPLIED PHYSICS LETTERS
卷 101, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4754574
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资金
- MEXT Japan
- Kyushu University
Si(100) wafers were subjected to severe plastic deformation under a pressure of 24 GPa using high-pressure torsion (HPT). Si wafers were plastically deformed at room temperature. HPT-processed samples were composed of metastable body centered cubic Si-III and rhombohedral Si-XII phases in the initial cubic diamond Si-I. The volume fraction of metastable phases increased with increasing plastic strain. Successive annealing at 873K led to the reverse transformation of metastable phases. A broad photoluminescence peak centered at about 650 nm appears due to the reverse transformation of Si-III/Si-XII nanograins and the reduction of number of defects in Si-I nanograins. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754574]
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