4.6 Article

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

期刊

APPLIED PHYSICS LETTERS
卷 100, 期 16, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4704655

关键词

II-VI semiconductors; indium; localised states; photoluminescence; p-n heterojunctions; polymer films; semiconductor doping; semiconductor heterojunctions; thin film devices; ultraviolet detectors; valence bands; wide band gap semiconductors; zinc compounds

资金

  1. UK-India Education and Research Initiative
  2. Queen's University Belfast
  3. Engineering and Physical Sciences Research Council [EP/G000433/1, EP/D048850/1] Funding Source: researchfish
  4. EPSRC [EP/G000433/1, EP/D048850/1] Funding Source: UKRI

向作者/读者索取更多资源

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704655]

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