期刊
APPLIED PHYSICS LETTERS
卷 101, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4739949
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资金
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [2011-0019984]
The Ti4O7 Magneli phase was grown on a Pt substrate by reactive DC magnetron sputtering. Resistive switching of a Ti4O7 thin film was tested with the three different electrode materials of Ti, W, and Pt. The electrical characteristics revealed ohmic contact with a Ti or W top electrode on the Ti4O7/Pt, while the Pt/Ti4O7/Pt structure showed the characteristics of a diode in a pristine state and unipolar resistive switching behavior after a soft breakdown. The resistive switching behavior of Pt/Ti4O7/Pt was found to be related to the formation of an amorphous Ti-Pt-O layer which originated from the intermixing of Pt with Ti4O7. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739949]
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