Highly effective p-type doping of diamond by MeV ion implantation of boron

Boron ions (2 MeV) were implanted into type IIa natural diamond samples to create deep buried conducting layers. The implantation was carried out at room temperature, followed by furnace annealing at temperatures up to 1650 degreesC. Data of Hall effect and conductivity measurements are presented in a wide temperature range, which clearly show p-type conduction with an activation of up to 30% of the implanted boron atoms, which is the highest value yet reported for ion implanted diamond. (C) 2004 Elsevier B.V. All rights reserved.