期刊
APPLIED PHYSICS LETTERS
卷 101, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4754627
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资金
- National Science Council of the Republic of China, Taiwan [NSC 100-2628-E-009-016-MY3]
By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm(2)/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 degrees C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754627]
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