期刊
APPLIED PHYSICS LETTERS
卷 101, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4766175
关键词
annealing; interface states; MOSFET; nanostructured materials; oxidation; silicon compounds; wide band gap semiconductors
资金
- Marie Curie ITN NetFISiC [264613]
- LAST POWER project [120218]
- ST Microelectronics - Catania [04.03.2011.002 D.B. Legal Dept. 3774]
This letter reports on the electrical properties of SiO2/4H-SiC interfaces after post-oxidation annealing (POA) in N2O and POCl3. The notably higher channel mobility measured in 4H-SiC MOSFETs subjected to POA in POCl3 was ascribed both to a reduction of the interface traps density and to an increase of donor concentration incorporated in SiC. Scanning spreading resistance microscopy on a SiC surface directly exposed to POA revealed that the incorporation of P-related shallow donors upon POA in POCl3 is more efficient than N-shallow donors incorporation during N2O treatments which subsequently explains the significantly enhanced channel conductivity of the MOSFETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766175]
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