期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 51, 期 5, 页码 2887-2895出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2004.835071
关键词
bulk LEDs; defects; DLTS; energy dependence; GaAs; photovoltaic; proton irradiation; radiation effects; solar cells
In this paper, we compare the energy dependences (53 and 115 MeV) of proton displacement damage coefficients for p(+)n GaAs solar cells with previously reported calculations of nonionizing energy loss (NIEL). Deep level transient spectroscopy (DLTS) was used to generate damage coefficients from the introduction rates of defects. New damage coefficients generated from GaAs bulk LEDs light output (1-530 MeV) are also reported. The damage coefficients from these devices for proton energies E > 10 MeV vary but are bounded by the total and Coulombic NIEL.
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