期刊
APPLIED PHYSICS LETTERS
卷 100, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3685504
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资金
- Foundation for Fundamental Research on Matter (FOM)
- European Research Council (ERC)
- Grants-in-Aid for Scientific Research [23310096] Funding Source: KAKEN
Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of similar to 36 000 cm(2)/Vs at low temperature. (C) 2012 American Institute of Physics. [doi:10.1063/1.3685504]
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