期刊
APPLIED PHYSICS LETTERS
卷 101, 期 23, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4769818
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资金
- Semiconductor Technology Academic Research Center (STARC)
- Institute of Materials Structure Science in KEK [11S2-003]
We have investigated band discontinuities and chemical structures of Al2O3 gate insulator films on n-type GaN semiconductor by photoemission and x-ray absorption spectroscopy. It is found that the solid phase epitaxy at the GaN crystal during annealing procedures at 800 degrees C leads to phase transformation of Al2O3 films from amorphous to crystalline. Changes in crystallographic structures closely correlate with the significant increase in conduction band discontinuity at the Al2O3/GaN interface, which suggests that epitaxial Al2O3 films on GaN semiconductor, free from grain boundaries of Al2O3 polycrystalline, hold the potential for high insulation performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769818]
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