期刊
APPLIED PHYSICS LETTERS
卷 100, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3676663
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资金
- National Natural Science Foundation of China [51002064, 50972049]
- Project of Shandong Province Higher Educational Science and Technology Program [J09LD19]
- Chinese Ministry of Education [210121]
- Outstanding Young Scientists Foundation Grant of Shandong Province [BS2009CL001]
- State Key Laboratory of Crystal Materials (Shandong University) [KF1108]
Na0.5Bi0.5TiO3 (NBT), Ce-doped NBT (NBTCe), Fe-doped NBT (NBTFe), and (Ce,Fe)-codoped NBT (NBTCeFe) thin films were fabricated on LaNiO3(100)/Si substrates by metal organic decomposition. The leakage current density of NBTCeFe at 500 kV/cm is reduced by approximately two orders of magnitude by reducing the density of oxygen vacancies and forming the defect complexes, compared with NBT film. Enhanced ferroelectricity is achieved in NBTCeFe with a large remanent polarization of 24 mu C/cm(2) due to the reduced leakage current, extra A-site vacancies, and lattice distortion. The NBTCeFe also exhibits a dielectric constant of 585 and dielectric loss of 0.05 at 10 kHz. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676663]
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